Anisotropic negative magnetoresistance in a variable-thickness electron gasNEWSON, D. J; PEPPER, M.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 32, pp L1049-L1055, issn 0022-3719Article

Monolithic integration of surge protection diodes into low-noise GaAs MESFET'sHAGIO, M; KANAZAWA, K; NAMBU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 892-895, issn 0018-9383Article

Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET'sTREW, R. J; ALI KHATIBZADEH, M; MASNARI, N. A et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 877-882, issn 0018-9383Article

A capacitance model for GaAs MESFET'sTZU-HUNG CHEN; SHUR, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 883-891, issn 0018-9383Article

Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrateOGAWA, M; KAMIYA, T.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 571-576, issn 0018-9383Article

Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic processCAMIN, D. V; PESSINA, G; PREVITALI, E et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 759-763, issn 0018-9499Conference Paper

Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article

No blister formation Pd/Pt double metal gate Misfet hydrogen sensorsCHOI, S.-Y; TAKAHASHI, K; MATSUO, T et al.IEEE electron device letters. 1984, Vol 5, Num 1, pp 14-15, issn 0741-3106Article

Low frequency and microwave characterization of submicron-gate In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunction metal-semiconductor field-effect transistors growth by molecular-beam epitaxyKUANG, J. B; TASKER, P. J; RATANAPHANYARAT, S et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6168-6174, issn 0021-8979, 7 p.Article

Drain avalanche breakdown in gallium arsenide MESFET'sWADA, Y; TOMIZAWA, M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1765-1770, issn 0018-9383, 1Article

Sub-band structure of a Lorentzian-doped MESFET device in the presence of a homogeneous backgroundROOS, G.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 865-872, issn 0268-1242Article

Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplificationHEINRICH, W; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 613-627, issn 0020-7217Article

Theoretical analysis of the nonlinear behaviour of a loss-free distributed amplifierPASCHALIDOU, V; AITCHISON, C. S.Electronics Letters. 1985, Vol 21, Num 3, pp 108-110, issn 0013-5194Article

Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeBARTON, T. M; LADBROOKE, P. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 117-119, issn 0741-3106Article

An analytical model for Pinchoff voltage evaluation of ion-implanted GaAs MESFET'sDUTT, M. B; RAM NATH; KUMAR, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 765-768, issn 0018-9383, 4 p.Article

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devicesCANALI, C; CHIUSSI, F; DONZELLI, G et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 117-124, issn 0026-2714, 8 p.Article

Submicron-gate In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxyKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1136-1138, issn 0003-6951, 3 p.Article

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

Heavy doping for improved short-channel operation of GaAs MESFETMOHAMMAD, S; PATIL, M. B; MORKOC, H et al.Electronics Letters. 1989, Vol 25, Num 5, pp 331-332, issn 0013-5194, 2 p.Article

Modeling deep-level trap effects in GaAs MESFET'sSON, I; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 632-640, issn 0018-9383, 9 p.Article

A novel cap-annealing technique using a WN_x film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication processNOGAMI, T; NAGAOKA, M; IIDA, N et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1989-1991, issn 0018-9383Article

Computer simulation of a new MESFET with an atomic-layer-doped structureYAMAGUCHI, K; SHIRAKI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1909-1914, issn 0018-9383, 1Article

High frequency divider circuits using ion-implanted Gaas MESFET'sANDRADE, T; ANDERSON, J. R.IEEE electron device letters. 1985, Vol 6, Num 2, pp 83-85, issn 0741-3106Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article